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absolute maximum ratings parameter units i d @v gs = 4.5v,t c = 25c continuous drain current 6.5 i d @v gs = 4.5v,t c = 100c continuous drain current 4.1 i dm pulsed drain current 26 p d @ t c = 25c max. power dissipation 23.2 w linear derating factor 0.18 w/c v gs gate-to-source voltage 10 v e as single pulse avalanche energy 21 mj i ar avalanche current 6.5 a e ar repetitive avalanche energy 2.32 mj dv/dt peak diode recovery dv/dt 4.3 v/ns t j operating junction -55 to 150 t stg storage temperature range pckg. mounting surface temp. 300 (for 5s) weight 0.25 (typical) g pre-irradiation c a radiation hardened irhlnm77110logic level power mosfet surface mount (smd-0.2) www.irf.com 1 100v, n-channel technology product summary part number radiation level r ds(on) i d irhlnm77110 100k rads (si) 0.29 ? 6.5a irhlnm73110 300k rads (si) 0.29 ? 6.5a for footnotes refer to the last page smd-0.2 features: 5v cmos and ttl compatible fast switching single event effect (see) hardened low total gate charge simple drive requirements ease of paralleling hermetically sealed ceramic package surface mount light weight 2n7609u8 international rectifiers r7 tm logic level power mosfets provide simple solution to interfacing cmos and ttl controlcircuits to power devices in space and other radiation environments.the threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation.this is achieved while maintaining single event gate rupture and single event burnout immunity. the device is ideal when used to interface directly with most logic gates, linear ics, micro-controllers, and other device types that operate from a 3.3-5v source. it may also be used to increase the output current of a pwm, voltage comparator or an operational amplifier where the logic level drive signal is available. pd-97326b esd rating: class 1a per mil-std-750, method 1020 downloaded from: http:///
irhlnm77110, 2n7609u8 pre-irradiation 2 www.irf.com for footnotes refer to the last page source-drain diode ratings and characteristics parameter min typ max units t est conditions i s continuous source current (body diode) 6.5 i sm pulse source current (body diode) 26 v sd diode forward voltage 1.4 v t j = 25c, i s = 6.5a, v gs = 0v t rr reverse recovery time 215 ns t j = 25c, i f = 6.5a, di/dt 100a/ s q rr reverse recovery charge 1.05 cv dd 25v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a note: corresponding spice and saber models are available on international rectifier web site. electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units test conditions bv dss drain-to-source breakdown voltage 100 v v gs = 0v, i d = 250 a ? bv dss / ? t j temperature coefficient of breakdown 0.105 v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state 0.29 ? v gs = 4.5v, i d = 4.1a resistance v gs(th) gate threshold voltage 1.0 2.0 v v ds = v gs , i d = 250 a ? v gs(th) / ? t j gate threshold voltage coefficient -6.0 mv/c g fs forward transconductance 3.5 s v ds = 15v, i ds = 4.1a i dss zero gate voltage drain current 1.0 v ds = 80v ,v gs =0v 1 0 v ds = 80v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward 100 v gs = 10v i gss gate-to-source leakage reverse -100 v gs = -10v q g total gate charge 11 v gs = 4.5v, i d = 6.5a q gs gate-to-source charge 4.0 nc v ds = 50v q gd gate-to-drain (miller) charge 6.0 t d (on) turn-on delay time 18 v dd = 50v, i d = 6.5a, t r rise time 75 v gs = 5.0v, r g = 7.5 ? t d (off) turn-off delay time 50 t f fall time 12 l s + l d total inductance 6.8 ciss input capacitance 572 v gs = 0v, v ds = 25v c oss output capacitance 124 p f f = 1.0mhz c rss reverse transfer capacitance 1.6 na nh ns a measured from the center of drain pad to center of source pad r g gate resistance 10.5 ? f = 1.0mhz, open drain thermal resistance parameter min typ max units test conditions r thjc junction-to-case 5.4 c/w downloaded from: http:///
www.irf.com 3 pre-irradiation irhlnm77110, 2n7609u8 international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and testconditions in order to provide a direct comparison. radiation characteristics international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. fig a. typical single event effect, safe operating area for footnotes refer to the last page table 1. electrical characteristics @ tj = 25c, post total dose irradiation parameter upto 300k rads (si) 1 units test conditions min max bv dss drain-to-source breakdown voltage 100 v v gs = 0v, i d = 250a v gs(th) gate threshold voltage 1.0 2.0 v gs = v ds , i d = 250a i gss gate-to-source leakage forward 100 na v gs = 10v i gss gate-to-source leakage reverse -100 v gs = -10v i dss zero gate voltage drain current 1.0 a v ds = 80v, v gs =0v r ds(on) static drain-to-source on-state resistance (to-3) 0.32 ? v gs = 4.5v, i d = 4.1a r ds(on) static drain-to-source on-state v sd diode forward voltage 1.4 v v gs = 0v, i d = 6.5a resistance (smd-0.2) 0.29 ? v gs = 4.5v, i d = 4.1a 1. part numbers irhlnm77110, irhlnm73110 0 20 40 60 80 100 120 -7 -6 -5 -4 -3 -2 -1 0 vgs vds let=38 5% let=62 5% let=85 5% table 2. typical single event effect safe operating area let energy range vds (v) (mev/(mg/cm 2 )) (mev) (m) @vgs= @vgs= @vgs= @vgs= @vgs= @vgs= 0v -2v -4v -5v -6v -7v 38 5% 300 7.5% 38 7.5% 100 100 100 100 100 100 62 5% 355 7.5% 33 7.5% 100 100 100 100 100 - 85 5% 380 10% 29 7.5% 100 100 100 100 - - downloaded from: http:///
irhlnm77110, 2n7609u8 pre-irradiation 4 www.irf.com normalized on-resistance vs. temperature typical output characteristics typical output characteristics typical transfer characteristics 15 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width, tj = 25c vgs top 10v 5.0v 4.5v 4.0v 3.5v 3.0v 2.5v bottom 2.25v 2.25v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 150c 2.25v vgs top 10v 5.0v 4.5v 4.0v 3.5v 3.0v 2.5v bottom 2.25v 012345678910 v gs , gate-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) v ds = 50v 6 0 s pulse width t j = 150c t j = 25c -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.0 0.5 1.0 1.5 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) v gs = 4.5v i d = 6.5a downloaded from: http:///
www.irf.com 5 pre-irradiation irhlnm77110, 2n7609u8 fig 7. typical drain-to-source breakdown voltage vs temperature fig 8. typical threshold voltage vs temperature fig 5. typical on-resistance vs gate voltage fig 6. typical on-resistance vs drain current -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , temperature ( c ) 100 110 120 130 v ( b r ) d s s , d r a i n - t o - s o u r c e b r e a k d o w n v o l t a g e ( v ) i d = 1.0ma -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , temperature ( c ) 0 0.5 1.0 1.5 2.0 2.5 3.0 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 50a i d = 250a i d = 1.0ma i d = 150ma 0 2 4 6 8 10 12 14 16 18 20 i d, drain current (a) 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) vgs = 4.5v t j = 25c t j = 150c 2 4 6 8 10 12 v gs, gate -to -source voltage (v) 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) i d = 6.5a t j = 25c t j = 150c downloaded from: http:///
irhlnm77110, 2n7609u8 pre-irradiation 6 www.irf.com typical source-to-drain diode forward voltage
typical gate charge vs. gate-to-source voltage typical capacitance vs. drain-to-source voltage maximum drain current vs. case temperature 1 10 100 v ds , drain-to-source voltage (v) 0 200 400 600 800 1000 1200 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0.2 0.4 0.6 0.8 1.0 1.2 1.4 v sd , source-to-drain voltage (v) 0.1 1.0 10 100 i s d , r e v e r s e d r a i n c u r r e n t ( a ) v gs = 0v t j = 150c t j = 2 5 c 02468101214161820 q g, total gate charge (nc) 0 2 4 6 8 10 12 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 80v v ds = 50v v ds = 20v i d = 6.5a for test circuit see figure 17 25 50 75 100 125 150 t c , case temperature (c) 0 1 2 3 4 5 6 7 i d , d r a i n c u r r e n t ( a ) downloaded from: http:///
www.irf.com 7 pre-irradiation irhlnm77110, 2n7609u8 fig 14. maximum avalanche energy vs. drain current fig 15. maximum effective transient thermal impedance, junction-to-case maximum safe operating area 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc p t t dm 1 2 25 50 75 100 125 150 starting t j , junction temperature (c) 0 5 10 15 20 25 30 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 2.9a 4.1a bottom 6.5a 1 10 100 1000 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1ms 10ms operation in this area limited by rds(on) 100s dc downloaded from: http:///
irhlnm77110, 2n7609u8 pre-irradiation 8 www.irf.com q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 17b. gate charge test circuit fig 17a. basic gate charge waveform v ds 90%10% v gs t d(on) t r t d(off) t f fig 16a. unclamped inductive test circuit fig 16b. unclamped inductive waveforms t p v (br)dss i as fig 18a. switching time test circuit fig 18b. switching time waveforms r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs
1

0.1 % + - downloaded from: http:///
www.irf.com 9 pre-irradiation irhlnm77110, 2n7609u8 pulse width 300 s; duty cycle 2% total dose irradiation with v gs bias. 10 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. total dose irradiation with v ds bias. 80 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. repetitive rating; pulse width limited by maximum junction temperature. v dd = 25v, starting t j = 25c, l= 0.98mh peak i l = 6.5a, v gs = 10v i sd 6.5a, di/dt 490a/ s, v dd 100v, t j 150c footnotes: ir world headquarters: 101 n, sepulveda blvd, el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 12/2014 case outline and dimensions smd-0.2 2.69 [.106] max. 5.74 [.226] 5.08 [.200] 8.15 [.321] 7.75 [.305] top bottom 32 1 2.19 [.086] 1.93 [.076] 1.02 [.040] 0.76 [.030] 4x 0.25 [.010] ref. 0.83 [.032] ref. 1.02 [.040] 0.76 [.030] 4.67 [.184] 4.42 [.174] 3x 0.25 [.010] ref. 5.16 [203] 4.90 [.193] 2x 2.13 [.084] 1.88 [.074] 2x 2x notes: 1. dimensioning & tolerancing per asme y14.5m-1994. 2. controlling dimension: inch. 3. dimensions are shown in millimeters [inches]. pad assignment 1 = drain2 = gate 3 = source downloaded from: http:///

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